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Creators/Authors contains: "Vitale, Steven A"

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  1. Free, publicly-accessible full text available December 1, 2026
  2. Abstract Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching mechanisms with precise multi-level control but poor scalability or electrical switching with seamless integration and scalability but mostly limited to a binary response. Recent works have demonstrated electrical multi-level switching; however, they relied on the stochastic nucleation process to achieve partial crystallization with low demonstrated repeatability and cyclability. Here, we re-engineer waveguide-integrated microheaters to achieve precise spatial control of the temperature profile (i.e., hotspot) and, thus, switch deterministic areas of an embedded phase change material cell. We experimentally demonstrate this concept using a variety of foundry-processed doped-silicon microheaters on a silicon-on-insulator platform to trigger multi-step amorphization and reversible switching of Sb2Se3and Ge2Sb2Se4Te alloys. We further characterize the response of our microheaters using Transient Thermoreflectance Imaging. Our approach combines the deterministic control resulting from a spatially resolved glassy-crystalline distribution with the scalability of electro-thermal switching devices, thus paving the way to reliable multi-level switching towards robust reprogrammable phase-change photonic devices for analog processing and computing. 
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  3. We experimentally demonstrate the first electrically programmable, non-volatile silicon photonic content addressable memory cell using Sb2Se3phase change material on microring resonators, opening the path for light-based search operations in zero-power look-up tables. 
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  4. Abstract A lack of inversion symmetry coupled with the presence of time‐reversal symmetry endows 2D transition metal dichalcogenides with individually addressable valleys in momentum space at theKandK′points in the first Brillouin zone. This valley addressability opens up the possibility of using the momentum state of electrons, holes, or excitons as a completely new paradigm in information processing. The opportunities and challenges associated with manipulation of the valley degree of freedom for practical quantum and classical information processing applications were analyzed during the 2017 Workshop on Valleytronic Materials, Architectures, and Devices; this Review presents the major findings of the workshop. 
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